Engineering topological exciton structures in two-dimensional semiconductors by a periodic electrostatic potential-湖南大学物理与微电子科学学院

Engineering topological exciton structures in two-dimensional semiconductors by a periodic electrostatic potential

创建于2025年10月24日星期五作者 : 李萍浏览量 :

主讲人：俞弘毅，中山大学教授

时间：2025年10月28日10:00

地点：物电学院A栋316

联系人：童庆军

讲座摘要：We show the ability of hybridizing different Rydberg states by a periodic electrostatic potential provides a conceptually new scheme for engineering topological exciton structures in layered transition metal dichalcogenides. Such a potential can be remotely imprinted from charge distributions in substrate layers, whose large tunability gives rise to rich topological phase diagrams for the exciton. We find the topological lowest band of the dipolar interlayer exciton can exhibit a small bandwidth, as well as remarkable quantum geometries well suited for realizing the long-sought bosonic fractional Chern insulator. For monolayer excitons, topological bands and in-gap helical edge states can emerge near the energy of 2p states.

主讲人简介：俞弘毅，中山大学教授，本科毕业于北京大学物理系，博士毕业于中科院物理所，曾在香港大学物理系从事博士后和研究助理教授职位。近些年来主要研究二维层状半导体领域的激子光电性质、自旋/赝自旋操控和关联电子晶体中的新奇元激发等理论，其多个理论预言已被后续实验证实，产生了广泛国际影响。现已应邀撰写综述4篇、专著章节2章，并在2016年美国物理学会三月会议上应邀报告其研究成果。已发表研究论文近70篇，web of science被引11000余次，入选科睿唯安评选的2021-2024年度交叉学科领域高被引科学家名单。