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Epitaxial growth and physical properties of GaN thin films and AlGaN/GaN heterostructures on various Si substrates

创建于2019年01月14日 星期一作者 : 科研办 浏览量 :

主讲人:沈波,北京大学教授
时  间:2019年1月18日14:30
地  点:物电学院A栋335学术报告厅
联系人:廖蕾

 

 

 

 

讲座摘要:Due to the properties of large mismatch and strong polarization, the epitaxial growth and defect control of GaN thin films and GaN-based heterostructures on various Si substrates still face a series of scientific and technical issues. In recent years, the epitaxial growth of GaN thin films and AlGaN/GaN heterostrucures on Si (111), Si (110) and Si (100) substrates have been investigated systematically in our group. The “large lattice mismatch stress control” technology has been developed for the GaN epitaxy on Si substrates, and the 8-µm-thick, continuous GaN epilayers with low dislocation density and AlGaN/GaN heterostructures with the 2DEG mobility of 2240 cm2/V.s on Si (111) substrates have been achieved. AlGaN/GaN heterostructures of high quality on Si (110) substrates have also been realized. The key problem of the two-domain structure of GaN on a Si (100) substrate, which is caused by the reconstruction of Si (100) surface, has been solved by the innovation development of the SiO2/graphene interlayer in MOCVD growth, and thus the epitaxial growth of single-crystalline GaN films on Si (100) substrates has been achieved. On the above basis, the role of carbon impurities in GaN has been investigated. The two local vibrational modes of isolated CN  in GaN have been observed and identified for the first time. The results provide an unambiguous evidence of the substitutional C impurities occupying the N site in C-doped semi-insulating GaN thin films.

 

 

 

 

主讲人简介:沈波,男,1963年生,北京大学理学部副主任,物理学院长江特聘教授、国家杰出青年基金获得者和国家创新研究群体带头人、国家973计划项目首席科学家、国家863计划“第三代半导体”重点专项总体专家组组长、国家“战略性先进电子材料”重点专项总体专家组成员。先后在南京大学、中国科技大学和日本东北大学获得学士、硕士和博士学位。曾任日本东京大学产业技术研究所研究员,东京大学先端科技研究中心、千叶大学电子学与光子学研究中心客座教授、日本产业技术综合研究所访问教授。1995年迄今一直从事氮化物宽禁带半导体材料、物理和器件研究和成果的产业化推广工作。先后主持和作为核心成员参加了973计划、863计划和自然科学基金重大/重点项目等20多项科研课题,发表SCI收录论文310多篇,论文被引用3400多次,先后在国内外学术会议上做邀请报告40多次,获得/申请国家发明专利50多件, 多次担任国际学术会议顾问委员会或程序委员会成员,担任国内多个国家重点实验室、科学院重点实验室和国防重点实验室学术委员会委员,先后获国家技术发明二等奖、国家自然科学二等奖、江苏省科技进步一等奖和教育部科技进步一等奖。