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邹旭明 副教授

电子科学与技术系 高性能纳电子器件 半导体器件与物理 该Email地址已收到反垃圾邮件插件保护。要显示它您需要在浏览器中启用JavaScript。

教育经历:

2011.09-2016.06:   博士, 武汉大学物理科学与技术学院

2002.09-2006.06:   学士, 武汉大学物理科学与技术学院

近年论文列表:

  1. X. Zou, C.-W. Huang, L. Wang, L.-J. Yin, W. Li, J. Wang, B. Wu, Y. Liu, Q. Yao, C. Jiang, W.-W. Wu, L. He, S. Chen, J. C. Ho, and L. Liao*, Dielectric Engineering of Boron Nitride/Hafnium Oxide Heterostructure for High-Performance Two-Dimensional Field Effect Transistors, Advanced Materials, 28, 2062,(2016).
  2. X. Zou, J. Wang, C.-H. Chiu, Y. Wu, X. Xiao, C. Jiang, W.-W. Wu, L. Mai, T. Chen, J. Li, J. C. Ho*, and L. Liao*, Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors, Advanced Materials,26, 6255,(2014).
  3. X. Zou, J. Wang, X. Liu, C. Wang, Y. Jiang, Y. Wang, X. Xiao, J. C. Ho*, J. Li, C. Jiang, Y. Fang, W. Liu, and L. Liao*, Rational Design of Sub-Parts per Million Specific Gas Sensors Array Based on Metal Nanoparticles Decorated Nanowire Enhancement-Mode Transistors, Nano Letters,13, 3287,(2013).
  4. X. Zou, X. Liu, C. Wang, Y. Jiang, Y. Wang, X. Xiao, J. C. Ho*, J. Li, C. Jiang, Q. Xiong, and L. Liao*, Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors, ACS Nano, 7, 804,(2013).
  5. Z. Yang, X. Liu, X. Zou, J. Wang, C. Ma, C. Jiang, J. C. Ho, C. Pan, X. Xiao, L. Liao*, Performance Limits of the Self-Aligned Nanowire Top-Gated MoS2 Transistors, Advanced Functional Materials (Accepted)
  6. J. Wang, Q. Yao, C. Huang, X. Zou, L. Liao*, S. Chen, Z. Fan, K. Zhang, W. Wu, X. Xiao, C. Jiang, W. Wu, High Mobility MoS2 Transistors with Low Schottky Barrier Contact by using Atomic Thick h-BN as a Tunneling Layer, Advanced Materials, (Accepted)
  7. J. Wang, S. Li, X. Zou, J. C. Ho, Lei Liao*, X. Xiao, C. Jiang, W. Hu, J. Wang, and J. Li, Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation, Small, 11,5932,(2015).
  8. Z. Zhang, X. Zou, L. Xu, and L. Liao*, W. Liu, J. Ho, X. Xiao, C. Jiang, J. Li, Hydrogen gas sensor based on metal oxide nanoparticles decorated graphene transistor, Nanoscale, 7, 10078,(2015).
  9. C. Liao, X. Zou, C-W Huang, J. Wang, K. Zhang, Y. Kong, T. Chen, W-W Wu, X. Xiao, C. Jiang, and L. Liao*, Low interface trap densities and enhanced performance of AlGaN/GaN MOS high electron mobility transistors using thermal oxidized Y2O3 interlayer, IEEE Electron Device Letters, 36, 1284,(2015).
  10. X. Liu, L. Jiang, X. Zou, X. Xiao, S. Guo, C. Jiang, X. Liu, Z. Fan, W. Hu, X. Chen, W. Lu, W. Hu, and L. Liao*, Scalable Integration of Indium Zinc Oxide/PhotosensitiveNanowire Composite Thin-Film Transistors for Transparent Multicolor Photodetectors Array, Advanced Materials,26, 2919,(2014).
  11. J. Miao, W. Hu*, N. Guo, Z. Lu, X. Zou, and L. Liao*, S. Shi, P. Chen, Z. Fan, J. C. Ho, T.-X. Li, X. S. Chen, W. Lu. Single InAs Nanowire Room-Temperature Near-Infrared Photodetectors, ACS Nano, 8, 3628,(2014).
  12.  J. Wang, X. Zou, X. Xiao, L. Xu, C. Wang, C. Jiang, J. C. Ho, T. Wang, J. Li, and L. Liao*. Floating Gate Memory-based Monolayer MoS2 Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics, Small, 11, 208, (2014).