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刘兴强 副教授

电子科学与技术系 微纳电子器件 半导体与物理 该Email地址已收到反垃圾邮件插件保护。要显示它您需要在浏览器中启用JavaScript。

教育背景:

■  2010.9~2015.7 武汉大学物理学院        凝聚态物理学  博士

■  2005.9~2009.7 河南师范大学物理学院    理论物理学    本科

 

主要从事MoS2等二维材料的电子和光电子器件方面的研究工作以及非晶金属氧化物半导体薄膜晶体管方面的研究工作,及其在光电器件方面的应用。

 

论文发表情况:

1. Transparent Megahertz Circuits from Solution-processed Composite Thin Films, X. Liu, D. Wan, Y. Wu, X. Xiao, S. Guo, C. Jiang, J. Li, T. Chen, X. Duan, Z.Fan, L. Liao*. Nanoscale 8, 7978-7983, 2016.

2. Enhancing Photoresponsivity of MoS2 Field-Effect Transistor by GaN Nanowire Introduced Piezo-Phototronic Effect, X. Liu, X. Yang, G. Gao, Z. Yang, H. Liu, Q. Li, Z. Lou, G. Shen, L. Liao, C. Pan*, Z. Wang*. ACS Nano 2016, 10, 7451-7457.

3. Transparent, High-Performance InGaZnO/Aligned-SnO2 Nanowires Composite Thin-Film Transistors and Their Application in Photodetectors, X. Liu, X. Liu, J. Wang, C. Liao, X. Xiao, S. Guo, C. Jiang, Z. Fan, T. Wang, X. Chen, W. Lu, W. Hu*, L. Liao*. Adv. Mater. 26, 7399-7404, 2014.

4. Scalable Integration of Indium Zinc Oxide/Photosensitive-Nanowire Composite Thin-Film Transistors for Transparent Multicolor Photodetectors Array, X. Liu, L. Jiang, X. Zou, X. Xiao, S. Guo, C. Jiang, X. Liu, Z. Fan, W. Hu, X. Chen, W. Lu, W. Hu*, L. Liao*Adv. Mater. 26, 2919-2924, 2014

5. Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotube Hybrid Film for Unique Performance Transistors, X. Liu, C. Wang, B. Cai, X. Xiao, S. Guo, Z. Fan, J. Li, X. Duan and L. Liao*, Nano Lett., 12, 3596-3601, 2012.

6. High-mobility Transparent Amorphous Metal Oxide/nanostructure Composite Thin Film Transistors with Enhanced-current Paths for Potential High-speed Flexible Electronics, X. Liu, J. Miao, L. Liao* and W. Hu, J. Mater. Chem. C, 2, 1201-1208, 2014.

7. High Mobility Amorphous InGaZnO Thin Film Transistor with Single Wall Carbon Nanotubes Enhanced-current Path,X. Liu, C. Wang, X. Xiao, J. Wang, S. Guo, C. Jiang, W. jong Yu, W. Hu, J. Li and L. Liao*, Appl. Phys. Lett., 103, 223108, 2013.

8. High Performance Amorphous ZnMgO/Carbon Nanotube Composite Thin-film Transistors with a Tunable Threshold Voltage, X. Liu, W. Liu, X. Xiao, C. Wang, Z. Fan, Y. Qu, B. Cai, S. Guo, J. Li and C. Jiang, X. Duan and Lei Liao*, Nanoscale, 5, 2830-2834,2013.

9. Ferroelectric Memory Based on Nanostructures, X. Liu, Y. Liu, W. Chen, J. Li and L. Liao*, Nanoscale Res. Lett., 7, 1-16, 2012.

10. Design of Large-scale Memristor Cell Using W-implanted SiO2 Films, W. Li, X. Liu (equally), Y. Wang, Z. Dai, W. Wu, L. Cheng, Y. Zhang, Q. Liu, X. Xiao, and C. Jiang, Appl. Phys. Lett., 108, 153501, 2016.

11. Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors, ACS Nano, X. Zou, X. Liu, C. Wang, Y. Jiang, Y. Wang, X. Xiao, J. C. Ho, J. Li, C. Jiang, Q. Xiong and L. Liao*, 7, 804-810, 2012.

12. Rational Design of Sub-Parts per Million Specific Gas Sensors Array Based on Metal Nanoparticles Decorated Nanowire Enhancement-Mode Transistors, X. Zou, J. Wang, X. Liu, C. Wang, Y. Jiang, Y. Wang, X. Xiao, J. C. Ho, J. Li, C. Jiang, Y. Fang, W. Liu and L. Liao*, Nano Lett., 13, 3287-3292, 2013.

13. High-Mobility Solution-Processed Amorphous Indium Zinc Oxide/In2O3 Nanocrystal Hybrid Thin-Film Transistor, C. Wang, X. Liu, X. Xiao, Y. Liu, W. Chen, J. Li, G. Shen. and L. Liao*, IEEE Electron Device Lett., 34, 72-74, 2013.

14. Shape-dependent Localized Surface Plasmon Enhanced UV-Emission from ZnO Grown by Atomic Layer Deposition, Y. Lin, X. Liu, T. Wang, C. Chen, H. Wu, L. Liao and C. Liu, Nanotechnology, 24. 125705, 2013.

15. Tunable Electrical Properties in High-Valent Transition-Metal-Doped ZnO Thin-Film Transistors, L. Xu., Z. Li, X. Liu, J. Wang, X. Xiao, C. Jiang, Y. Liu, W. Chen, J. Li. And L. Liao*, IEEE Electron Device Lett., 35, 759-761, 2014.

16. The Study for Solution-Processed Alkali Metal Doped Indium Zinc Oxide Thin-Film Transistors, D. Wan, X. Liu, L.Xu, C Liu, X. Xiao, S.Guo, L. Liao, IEEE Electron Device Lett., 37, 50-52, 2016.

17. Rational Hydrogenation for Enhanced Mobility and High Reliability on ZnO-based Thin Film Transistors: from Simulation to Experiment, L. Xu, Q. Chen, L. Liao*, X. Liu, T. C. Chang,K. C. Chang, T. M. Tsai, C. Jiang, J. Wang, J. Li, ACS Appl. Mater. Interfaces, 8, 5408-5415, 2016.

18. Performance Limits of the Self-Aligned Nanowire Top-Gated MoS2 Transistors, Z. Yang, X. Liu, X. Zou, J. Wang, C. Ma, C. Jiang, J. C. Ho, C. Pan, X. Xiao* and L. Liao* Adv. Funct. Mater. 2016, DOI: 10.1002/adfm.201602250.