联系人图像

廖蕾 教授

中组部青年拔尖人才计划、国家自然基金优秀青年科学基金

副院长 电子科学与技术系 高迁移率薄膜晶体管,高性能纳电子器件 高迁移率薄膜晶体管,高性能纳电子器件 该Email地址已收到反垃圾邮件插件保护。要显示它您需要在浏览器中启用JavaScript。 http://www.physics.whu.edu.cn/lliao/

廖蕾,男,198110月出生,湖南大学物理学院教授,博士生导师。主要开展高迁移率薄膜晶体管,高性能纳电子器件的研究。

Email: liaolei@whu.edu.cn; liaolei@hnu.edu.cn; 

 

1)受教育经历

·    2000-2004武汉大学物理学院本科

·    2004-2009武汉大学物理学院硕博连读,导师:李金钗教授

·    2005-2007中国科学院物理所联合培养,导师:王恩哥/白雪冬教授

·    20149    中央社会主义学院第十九期无党派人士培训班

2)研究工作经历

·    2017-现在湖南大学物理学院教授

·    2011-2016年武汉大学物理学院教授,电子科学与技术系系主任

·    2009-2011年加州大学洛杉矶分校,博士后,导师:段镶锋教授

·    2007-2009年南洋理工大学,千禧研究员导师:申泽襄/于霆教授

3)获奖及荣誉

中国侨联贡献奖                   (2016)

中组部青年拔尖人才计划           (2015)

湖北省自然科学一等奖(排名第二) (2012)

国家自然基金优秀青年科学基金     (2012)

Scopus“青年科学家之星       (2011)

全国百篇优秀博士论文提名奖       (2011)

湖北省楚天学者特聘教授           (2011)

教育部新世纪优秀人才支持计划     (2010)

加州大学洛杉矶分校博士后研究奖   (2010)

新加坡千禧奖                     (2008)

4)项目资助情况和社会兼职情况

主持国家自然科学基金大科学装置联合基金培育项目,面上项目,优秀青年项目,青年项目,教育部博士点基金,作为科研骨干参加科技部重点基础研究发展计划(973),重大科学研究计划纳米专项和重点研发计划。

2016年国家重点研发计划纳米专项会评专家

SID(国际信息显示协会)北京分会专业技术委员会委员

国家自然科学基金,江西省自然科学基金,山东省自然科学基金,陕西省自然科学基金和吉林省自然科学基金函评专家。

5)代表论文列表 (Citation > 6000, H = 46)

2017

1.  P. Gao*, Z. Y. Zhang, M. Q. Li, R. Ishikawa, B. Feng, H. J. Liu, Y. L. Huang, N. Shibata, X. M. Ma, K. H. Liu, E. G. Wang, D. P. Yu, L. Liao*, Y. H. Chu, Y. Ikuhara* Absence of Critical Thickness and Size Effect in Ultrathin Perovskite Ferroelectric Films Nature Comm. (Revised)

2.  A. Abliz, Q. G. Gao, D. Wan, X. Q. Liu, L. Xu, C. S. Liu*, C. Z. Jiang, X. F. Li, H. P. Chen, T. L. Guo, L. Liao*, Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors ACS Applied Materials & Interface DOI: 10.1021/acsami.6b15275

3.  Y. B. Yang, X. D. Yang, X. M. Zou, S. T. Wu, D. Wan, A. Y. Cao, L. Liao*, Q. Yuan*, and X. F. Duan* Ultrafine Graphene Nanomesh with Large On/Off Ratio for High-Performance Flexible Biosensors Adv. Funct. Mater. DOI: 10.1002/adfm.201604096

4.  Z. Y. Yang, X. Q. Liu, X. M. Zou, J. L. Wang, C. Ma, C. Z. Jiang, J. C. Ho, C. F. Pan, X. H. Xiao*, L. Liao* Performance Limits of the Self-Aligned Nanowire Top-Gated MoS2 Transistors Adv. Funct. Mater. DOI: 10.1002/adfm.201602250

 2016

5J. L. Wang, Q. Yao, C. W. Huang, X. M. Zou, L. Liao*, S. S. Chen, Z. Y. Fan, K. Zhang, W. Wu, X. H. Xiao, C. Z. Jiang, W. W. Wu High Mobility MoS2 Transistors with Low Schottky Barrier Contact by using Atomic Thick h-BN as a Tunneling Layer Adv. Mater. 28, 8302, (2016).

6D. S. Zheng, H. H. Fang, P. Wang, W. J. Luo, F. Gong, X. S. Chen, W. Lu, L. Liao*, J. L. Wang*, and W. D. Hu* High-Performance Ferroelectric Polymer Side-Gated CdS Nanowire Ultraviolet Photodetectors Adv. Funct. Mater. 26, 7690, (2016)

7A. Abliz, J. L. Wang, L. Xu, D. Wan, L. Liao*, C. Ye, C. S. Liu*, C. Z. Jiang, H. P. Chen, T. L. Guo Boost up the Electrical Performance of InGaZnO Thin Film Transistors with Inserting an Ultrathin InGaZnO:H layer Appl. Phys. Lett. 108, 213501, (2016)

8D. S. Zheng, J. L. Wang, W. D. Hu*, L. Liao*, H. H. Fang, N. Guo, P. Wang, F. Gong, X. D. Wang, Z. Y. Fan, X. Wu, X. J. Meng, X. S. Chen, W. Lu When nanowire meet ultra-high ferroelectric field – high performance full-depleted nanowire photodetectors Nano Lett. 16, 2548, (2016)

9X. Q. Liu, D. Wan, Y. Wu, X. H. Xiao, S. S. Guo, C. Z. Jiang, J. C. Li, T. S. Chen, X. F. Duan, Z. Y. Fan, L. Liao* Transparent Megahertz Circuits from Solution-processed Composite Thin Films Nanoscale 8, 7978, (2016)

10A. Abliz, C. W. Huang, J. L. Wang, L. Liao*, L. Xu, X. H. Xiao, W. W. Wu, Z. Y. Fan, C. Z. Jiang, J. C. Li, S. S. Guo, C. S. Liu, T. L. Guo Rational Design of ZnO:H/ZnO Bilayer Structure for High Performance Thin Film Transistors ACS Applied Materials & Interface 8, 7862, (2016)

11L. Xu, Q. Chen, L. Liao*, X. Q. Liu, T. C. Chang, K. C. Chang, T. M. Tsai, C. Z. Jiang, J. L. Wang*, J. C. Li Rational hydrogenation for enhanced mobility and high reliability on ZnO-based thin film transistors: from simulation to experiment ACS Applied Materials & Interface 8, 5408, (2016)

12Z. Y. Yang, J. L. Wang, L. Liao* Comment on “Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOX van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed” ACS Nano 10, 1714, (2016)

13X. M. Zou, C. W. Huang, L. F. Wang, L. J. Yin, W. Q. Li, J. L. Wang, B. Wu, Y. Q. Liu, Q. Yao, C. Z. Jiang, W. W. Wu, L. He, S. S. Chen, J. Ho, L. Liao* Dielectric Engineering of Boron Nitride/Hafnium Oxide Heterostructure for High-Performance Two-Dimensional Field Effect Transistors Adv. Mater. 28, 2062, (2016)

14D. Wan, X. Q. Liu, L. Xu, C. S. Liu, X. H. Xiao, S. S. Guo, L. Liao* The Study for Solution-Processed Alkali Metal Doped Indium Zinc Oxide Thin-Film Transistors IEEE Electron Device Letters 37, 50, (2016) Popular Articles (Jan. 2016)

 2015

15C. N. Liao, X. M. Zou, C. W. Huang, J. L. Wang, K. Zhang, Y. C. Kong, T. S. Chen, W. W. Wu, X. H. Xiao, C. Z. Jiang, L. Liao* Low interface trap densities and enhanced performance of AlGaN/GaN MOS high electron mobility transistors using thermal oxidized Y2O3 interlayer IEEE Electron Device Letters 36, 1284, (2015) Popular Articles (October 2015)

16J. L. Wang, S. L. Li, X. M. Zou, J. Ho, L. Liao*, X. H. Xiao, C. Z. Jiang, W. D. Hu, J. L. Wang, J. C. Li Integration of High- k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation Small 11, 5932, (2015)

17L. Xu, C. W. Huang, A. Abliz, Y. Hua, L. Liao*, W. W. Wu, X. H. Xiao, C. Z. Jiang, W. Liu, J. C. Li* The different roles of contact materials between oxidation interlayer and doping effect for high performance ZnO thin film transistors Appl. Phys. Lett. 106, 051607, (2015)

18J. L. Wang, X. M. Zou, X. H. Xiao, L. Xu, C. L. Wang, C. Z. Jiang, J. C. Ho*, T. Wang, J. C. Li, L. Liao* Floating Gate Memory based Monolayer MoS2 Transistor with Metal Nanocrystals embedded in Gate Dielectrics. Small 11, 208, (2015)

 2014

19N. Guo, W. D. Hu*, L. Liao*, S. P. Yip, J. C. Ho, J. S. Miao, Z. Zhang, J. Zou, T. Jiang, S. W. Wu, X. S. Chen, W. Lu* Anomalous and highly-efficient InAs nanowire phototransistors based on majority carrier transport at room temperature. Adv. Mater. 26, 8203, (2014)

20X. Q. Liu, X. Liu, J. L. Wang, C. N. Liao, X. H. Xiao, S. S. Guo, C. Z. Jiang, Z. Y. Fan, T. Wang, X. S. Chen, W. Lu, W. D. Hu*, L. Liao* Transparent, High-Performance InGaZnO/Aligned-SnO2 Nanowires Composite Thin-Film Transistors and Their Application in Photodetectors. Adv. Mater. 26, 7399, (2014)

21X. M. Zou, J. L. Wang, C. H. Chiu, Y. Wu, X. H. Xiao, C. Z. Jiang, W. W. Wu, L. Q. Mai, T. S. Chen, J. C. Li, J. C. Ho*, L. Liao*, Interface Engineering for High-Performance Top-Gated MoS2 Field Effect Transistors. Adv. Mater. 26, 6255, (2014)

22X. Q. Liu, L. Jiang, X. M. Zou, X. H. Xiao, S. S. Guo, C. Z. Jiang, X. Liu, Z. Y. Fan, W. D. Hu, X. S. Chen, W. Lu, W. P. Hu*, L. Liao*, Scalable Integration of Indium Zinc Oxide/Photosensitive Nanowires Composite Thin Film Transistors for Transparent Multicolor Photodetectors Array. Adv. Mater. 26, 2919, (2014)

2013

23X. Q. Liu, C. L. Wang, X. H. Xiao, J. L. Wang, S. S. Guo, C. Z. Jiang, W. J. Yu, W. D. Hu, J. C. Li, L. Liao*, High mobility amorphous InGaZnO thin film transistor with single wall carbon nanotubes enhanced-current path. Appl. Phys. Lett. 103, 223108, (2013)

24C. L. Wang,X. F. Duan*, L. Liao*, High performance thin film transistors based on inorganic nanostructures and composites. Nano Today 8, 514, (2013)

25X. M. Zou, J. L. Wang, X. Q. Liu, C. L. Wang, Y. Jiang, Y. Wang, X. H. Xiao, J. C. Ho*, J. C. Li, C. Z. Jiang, Y. Fang, L. Liao*, Rational Design of Sub-ppm Specific Gas Sensors Array based on Metal Nanoparticles Decorated Nanowire Enhancement-Mode Transistors  Nano Lett. 13, 3287, (2013)

26X. Q. Liu, W. Liu, X. H. Xiao, C. L. Wang, Z. Y. Fan, Y. Q. Qu, B. Cai, S. S. Guo, J. C. Li, C. Z. Jiang, X. F. Duan, L. Liao*, High performance amorphous ZnMgO/Carbon nanotubes composite thin-film transistors with tunable threshold voltage Nanoscale5, 2830, (2013)

27X. M. Zou, X. Q. Liu, C. L. Wang, Y. Jiang, Y. Wang, X. H. Xiao, J. C. Ho*, J. C. Li, C. Z. Jiang, Q. H. Xiong, L. Liao*, Controllable electrical properties of metal doped In2O3 nanowires for high performance enhancement-mode transistors ACS Nano 7, 804, (2013).

28C. L. Wang, X. Q. Liu, X. H. Xiao, Y. L. Liu, W. Chen, J. C. Li, G. Z. Shen, L. Liao*, High Mobility Solution-processed Amorphous Indium Zinc Oxide/In2O3 Nanocrystals Hybrid Thin Film Transistor IEEE Electron Device Letters 34, 72, (2013).

 2012

29X. Q. Liu, C. L. Wang, B. Cai, X. H. Xiao, S. S. Guo, Z. Y. Fan*, J. C. Li, X. F. Duan, L. Liao*, Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotubes Hybrid Film for Unique Performance Transistor Nano Lett.12, 3596, (2012).

30L. Liao, X. F. Duan Graphene Transistors for Radio Frequency Electronics Materials Today 15, 328, (2012).

31Y. Z. Long, L. Liao*, X. F. Duan, Z. Y. Fan*, Large-scale Integration of Semiconductor Nanowires for High Performance Flexible Electronics ACS Nano 6, 1888, (2012).

 Before working as a PI

32N. O. Weiss, H. L. Zhou, L. Liao, Y. Liu, S. Jiang, Y. Huang, X. F. Duan, Graphene: An Emerging Electronic Material Adv. Mater. 24, 5782, (2012).

33R. Cheng, J. W. Bai, L. Liao, H. L. Zhou, Y. Chen, L. X. Liu, Y. C. Lin, S. Jiang, Y. Huang, X. F. Duan A scalable approach to high frequency self-aligned graphene transistors with transferred gate stacks PNAS 109, 11588, (2012).

34G. Liu, Y. C. Lin, L. Liao, Y. Chen, Y. Liu, W. Nathan, Y. Huang, X. F. Duan, Domain Wall Motion in Synthetic Co2Si Nanowires Nano Letters 12, 1972, (2012)

35L. Liao, J. W. Bai, R. Chen, H. L. Zhou, L. X. Liu, Y. Liu, Y. Huang, X. F. Duan, Scalable Fabrication of Self-Aligned Graphene Transistors and Circuits on Glass Nano Lett. 12, 2653 (2012).

36Y. Liu, R. Cheng, L. Liao, H. L. Zhou, J. W. Bai, Gang Liu, L. X. Liu, Y. Huang, X. F. Duan Plasmon resonance enhanced muticolour photodetection by graphene Nature Commun. 2, 579, (2011)

37W. J. Yu, L. Liao, S. H. Chae, Y. H. Lee, X. F. Duan* Molecular Doping Tunable Bandgap Opening in Bilayer Graphene Nano Lett. 11, 4759, (2011).

38J. W. Bai, L. Liao, H. L. Zhou, R. Cheng, L. X. Liu, Y. Huang, X. F. Duan Top-Gated Chemical Vapor Deposition Grown Graphene Transistors with Current Saturation Nano Lett. 11, 2555, (2011)

39L. Liao, Y. C. Lin, M. Q. Bao, R. Cheng, J. W. Bai, Y. Liu, Y. Q. Qu, K.. L. Wang, Y. Huang, X. F. Duan High speed graphene transistors with a self-aligned nanowire gate Nature 467, 305, (2010)

40L. Liao, J. W. Bai, R. Cheng, Y. C. Lin, Y. Q. Qu, Y. Huang, X. F. Duan Sub-100 nm Channel length graphene transistors Nano Lett. 10, 3952 (2010)

41L. Liao, J. W. Bai, R. Cheng, Y. C. Lin, S. Jiang, Y. Huang, and X. F. Duan Top-gated graphene nanoribbon transistors with ultra-thin high-k dielectrics Nano Lett. 10, 1917, (2010).

42L. Liao, J. W. Bai, Y. Q. Qu, Y. C. Lin, Y. J. Li, Y. Huang, and X. F. Duan High-k Oxide Nanoribbons as Gate Dielectrics for High Mobility Top-gated Graphene Transistors Proc. Natl. Acad. Sci. U.S.A. (PNAS) 107, 6711 (2010).

43L. Liao, J. W. Bai, Y. C. Lin, Y. Q. Qu, Y. Huang, and X. F. Duan High performance top-gated graphene nanoribbon transistors using zirconium oxide nanowires as high-k gate dielectrics Adv. Mater. 22, 1941 (2010).

44L. Liao, and X. F. Duan Graphene-dielectric integration for graphene transistor Materials Sciences & Engineering Report 70, 354, (2010).

45J. W. Bai, R. Cheng, F. X. Xiu, L. Liao, M. S. Wang, A. Shailos, K. Wang, Y. Huang, and X. F. Duan Observation of very large tunable negative magnetoresistance in graphene nanoribbon field-effect transistors Nature Nanotechnology 5, 655, (2010)

46Y. Wang, H. D. Tran, L. Liao, X. F. Duan, and R. B. Kaner Nanoscale Morphology, Dimensional control and electrical properties of oligoanilines J. Am. Chem. Soc. 132, 10365, (2010).

47Y. Q. Quan, L. Liao, Y. Wang, R. Cheng, Y. Huang, X. F. Duan Rational design of standalone photoelectric nanodevices as highly efficient photocatalysts Nano Lett. 10, 1941, (2010).

48Y. Q. Qu, L. Liao, Y. J. Li, H. Zhang, Y. Huang, and X. F. Duan Electrically Conductive and Optically Active Porous Silicon Nanowires Nano Lett. 9, 4539 (2009).

49B. Yan, L. Liao, Y. M. You, X. J. Xu, Z. Zheng, Z. X. Shen, J. Ma, L. M. Tong, and T. Yu Single-crystalline V2O5 ultralong nanoribbon waveguides Adv. Mater. 21, 2436, (2009).

50L. Liao, B. Yan, Y. F. Hao, G. Z. Xing, J. P Liu, and T. Yu P-type electrical, photoconductive and anomalous ferromagnetic properties of Cu2O nanowires Appl. Phys. Lett. 94, 113 (2009).

51L. Liao, M. B. Zheng, Z. Zhang, B. Yan, Z. X. Shen, and T. Yu The characterization and application of P-type semiconducting mesoporous carbon nanofibers Carbon 47, 1841 (2009).

52L. Liao, H. J. Fan, B. Yan, Z. Zhang, L. L. Chen, Z. X. Shen, and T. Yu Ferroelectric Transistors with Nanowire Channel: towards Nonvolatile Memory Applications ACS Nano 3, 700, (2009).

53L. Liao, K. H. Liu, W. L. Wang, X. D. Bai and E. G. Wang Multiwall BCN/C nanotube junction and its rectification behavior J. Am. Chem. Soc. 129, 9562,(2007).

54L. Liao, H. B. Lu, and J. C. Li The sensitivity of gas sensor based on single ZnO nanowire modulated by helium ion radiation Appl. Phys. Lett. 91, 173110, (2007).

55L. Liao, D. H. Liu, C. Liu, andJ. C. Li Self-assembly of aligned ZnO nanoscrews: Growth, configuration, and field emission Appl. Phys. Lett. 86, 083106, (2005).